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strong ir fet? irfh7084pbf hexfet ? power mosfet application ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? dc/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant ? v dss 40v r ds(on) typ. 0.95m ?? max 1.25m ?? i d (silicon limited) 265a ? i d (package limited) 100a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature ? pqfn 5x6 mm ? ? base part number package type standard pack orderable part number ? ? form quantity irfh7084pbf pqfn 5mm x 6mm tape and reel 4000 irfh7084trpbf 25 50 75 100 125 150 t c , case temperature (c) 0 60 120 180 240 300 i d , d r a i n c u r r e n t ( a ) limited by package 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 100a 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015
? irfh7084pbf 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 absolute maximium rating symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 40 a ? i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 265 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 170 ? i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 100 ? i dm pulsed drain current ? 400 a ? linear derating factor 1.25 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 ? c ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 185 mj e as (thermally limited) single pulse avalanche energy ?? 431 i ar avalanche current ? see fig 14, 15, 23a, a e ar repetitive avalanche energy ? mj thermal resistance parameter typ. max. units r ? jc (bottom) junction-to-case ? 0.5 0.8 c/w r ? jc (top) junction-to-case ??? 21 r ? ja junction-to-ambient ? ??? 35 r ? ja (<10s) junction-to-ambient ? ??? 20 p d @t c = 25c max power dissipation 156 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.034 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.95 1.25 m ?? v gs = 10v, i d = 100a ? v gs(th) gate threshold voltage 2.2 ??? 3.9 v v ds = v gs , i d = 150a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =40 v, v gs = 0v ??? ??? 150 v ds =40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 1.4 ??? ?? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.037mh, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 994a/s, v dd ? v (br)dss , t j ?? 150c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 29a, v gs =10v. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com /technical-info/appnotes/an-994.pdf
? irfh7084pbf 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 120 ??? ??? s v ds = 10v, i d =100a q g total gate charge ??? 127 190 i d = 100a q gs gate-to-source charge ??? 35 ??? v ds = 20v q gd gate-to-drain charge ??? 41 ??? v gs = 10v q sync total gate charge sync. (qg? qgd) ??? 195 ??? t d(on) turn-on delay time ??? 16 ??? ns v dd = 20v t r rise time ??? 31 ??? i d = 30a t d(off) turn-off delay time ??? 64 ??? r g = 2.7 ?? t f fall time ??? 34 ??? v gs = 10v ? c iss input capacitance ??? 6560 ??? pf ? v gs = 0v c oss output capacitance ??? 940 ??? v ds = 25v c rss reverse transfer capacitance ??? 650 ??? ? = 1.0mhz, see fig.5 c oss eff.(er) effective output capacitance (energy related) ??? 1120 ??? v gs = 0v, vds = 0v to 32v ?? see fig.11 c oss eff.(tr) output capacitance (time related) ??? 1300 ??? v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 400 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ??? ??? 4.5 ??? v/ns t j = 150c,i s =100a,v ds = 40v ? t rr reverse recovery time ??? 36 ??? ns t j = 25c v dd = 34v ??? 37 ??? t j = 125c i f = 100a, q rr reverse recovery charge ??? 38 ??? nc t j = 25c di/dt = 100a/s ??? ??? 40 ??? t j = 125c ? i rrm reverse recovery current ??? 1.7 ??? a t j = 25c ? nc ? d s g
? irfh7084pbf 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs . gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.0v vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 150c 4.0v vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 10v ? 60s pulse width t j = 25c t j = 150c 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 100a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v
? irfh7084pbf 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 fig 10. maximum safe operating area fig 11. drain-to?source breakdown voltage fig 12. typical c oss stored energy fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 10000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 40 41 42 43 44 45 46 47 48 49 v ( b r ) d s s , d r a in - t o - s o u r c e b r e a k d o w n v o lt a g e ( v ) id = 1.0ma 0 10 20 30 40 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 e n e r g y ( j ) 0 40 80 120 160 200 i d , drain current (a) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 6.0v vgs = 7.0v vgs = 10v vgs = 15v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on)
? irfh7084pbf 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a
? irfh7084pbf 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 240 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 240 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c
? irfh7084pbf 8 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform
? irfh7084pbf 9 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? irfh7084pbf 10 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 pqfn 5x6 tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description typ e package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1
? irfh7084pbf 11 www.irf.com ? 2015 international rectifier submit datasheet feedback march 19, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial ?? (per jedec jesd47f ?? guidelines ) moisture sensitivity level pqfn 5mmx 6mm msl1 (per jedec j-std-020d ?? ) rohs compliant yes revision history date comments 10/16/2014 ?? add pd at tc=25c on absolute max rating table on page 2 03/05/2015 ?????? updated e as (l =1mh) = 431mj on page 2 ????? updated note 8 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 29a, v gs =10v? on page 2 3/19/2015 ?? updated package outline on page 9. ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standard at the time of product release.

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